| PART |
Description |
Maker |
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SGW10N60 SGW10N60A SGB10N60A SGP10N60A |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 10A 600V TO220AB IGBT
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 10A 600V TO247AC IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4PC50UD IRG4PC50UD-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| FGH75N60SF FGH75N60SFTU |
Discrete IGBT
IGBT, TO-247AB ROHS COMPLIANT PACKAGE-3
600V, 75A Field Stop IGBT
|
Fairchild Semiconductor, Corp.
|
| IRG4BC10KD IRG4BC10KDPBF |
9 A, 600 V, N-CHANNEL IGBT, TO-220AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
| 4MBI400VG-060R-50 |
IGBT MODULE (V series) 600V / 400A / IGBT, RB-IGBT 4 in one package
|
Fuji Electric
|
| IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STP10NB60SFP STGP10NB60SFP |
N-CHANNEL 10A - 600V - TO-220FP PowerMesh?IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A 600V TO-220 POWERMWSH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
| STGP3NB60S STGD3NB60S |
(STGP3NB60S / STGD3NB60S) N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH?/a> IGBT
N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT
N-CHANNEL 3A - 600V TO-220/DPAK POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGB3NB60FD STGD3NB60F STGP3NB60F STGP3NB60FD STGF |
(STGP3NB60F / STGD3NB60F / STGF3NB60FD / STGB3NB60FD) N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH⑩ IGBT
N-CHANNEL 3A - 600V TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH?/a> IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
